Electronic Properties of Graphene Nanoribbons With Defects

نویسندگان

چکیده

Graphene nanoribbons (GNRs) are the most important emerging structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated contain lattice defects effect of which on their electronic properties has not studied enough. In this paper, we apply Non-Equilibrium Green's function (NEGF) method combined tight-binding Hamiltonians to investigate conductance GNRs. We specifically study, butterfly shaped GNRs, operate effectively as switches, used in CMOS-like architectures. The cases usual defects, namely single double vacancy analytically examined. these vacancies was computed by placing them different regions various numbers GNR nano-devices, edges, main body, contacts narrow regions. computation results presented form energy dispersion diagrams well maximum a number defects. also present defect tolerance devices.

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ژورنال

عنوان ژورنال: IEEE Transactions on Nanotechnology

سال: 2021

ISSN: ['1536-125X', '1941-0085']

DOI: https://doi.org/10.1109/tnano.2021.3055135